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    公开号:NL1036891A1
    申请号:NL1036891
    申请日:2009-04-21
    公开日:2009-11-03
    发明作者:Tjarko Adriaan Rudolf Van Empel
    申请人:Asml Netherlands Bv；
    IPC主号:
    专利说明:

    DICHROIC MIRROR, METHOD FOR MANUFACTURING A DICHROIC MIRROR, LITHOGRAPHIC EQUIPMENT, SEMICONDUCTOR DEVICE AND METHOD OR MANUFACTURING THEREFOR
    FIELD
    The invention relates to a dichroic mirror, a lithographic apparatus including a dichroic mirror, a method of manufacturing a dichroic mirror, a method of manufacturing a semiconductor device, and a semiconductor device.
    BACKGROUND
    Lithography is a process used to create features on the surface of substrates. Such substrates can include those used in the manufacture of flat panel displays, circuit boards, various integrated circuits (ICs), and the like. A frequently used substrate for such applications is a semiconductor wafer. One skilled in the relevant art will recognize that the description also applies to other types or substrates. In such a case, the patterning structure may generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion on a substrate (eg, a silicon wafer) that has been coated with a layer of radiation-sensitive material (eg, a resist). In general, a single substrate will contain a whole network of adjacent target portions that are successively irradiated through the projection system, one at a time. In current apparatus, employing patterning by a patterning structure on support (e.g., a mask table), a distinction can be made between two different types of machines. In one type of lithographic projection apparatus, each target portion is irradiated by exposing the entire pattern of the patterning structure onto the target portion at once; Such an apparatus is commonly referred to as a wafer stepper. In another type of apparatus, commonly referred to as a step-and-scan apparatus, each target portion is irradiated by progressively scanning the pattern of the patterning structure under the projection beam in a given reference direction (the "scanning" direction) while synchronously scanning the substrate support parallel or anti-parallel to this direction. Since, in general, the projection system will have a magnification factor M (with M <1) the speed V at which the substrate table is scanned will be a factor M times that at which the mask table is scanned. More information with regard to lithographic devices as described here can be detailed, for example, from United States Patent no. 6,046,792, incorporated with reference.
    In a manufacturing process using a lithographic projection apparatus, a pattern (e.g., in a mask), imaged onto a substrate that is at least partially covered by a layer of radiation-sensitive material (e.g., a resist). Prior to this imaging step, the substrate may undergo various procedures, such as priming, resist coating, and a soft bake. After exposure, the substrate maybe subjected to other procedures, such as a post-exposure bake (PEB), development, a hard bake and measurement / inspection of the imaged features. This array of procedures is used as a basis to pattern an individual layer or a device, e.g., an IC. Such a patterned layer may then undergo various processes such as etching, ion implantation (doping), metallization, oxidation, chemo-mechanical polishing, etc., all intended to finish off an individual layer. If several layers are desired, then the whole procedure, or a variant thereof, may be repeated for each new layer. Eventually, an array of devices will be present on the substrate (wafer). These devices are then separated from one another by a technique such as dicing or sawing, whence the individual devices can be mounted on a carrier, connected to pins, etc. Further information regarding such processes can be obtained, for example, from the book " Microchip Fabrication: A Practical Guide to Semiconductor Processing, "Third Edition, by Peter van Zant, McGraw Hill Publishing Co., 1997, ISBN 0-07-067250-4, incorporated by reference.
    For the sake of simplicity, the projection system may be referred to as the "lens"; however, this term should be broadly interpreted and compassing various types of projection system, including refractive optics, reflective optics, and catadioptric systems, for example. The radiation system may also include components operating according to any of these design types for directing, shaping or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a "lens". The position of a second element traversed by the projection beam relative to a first element traversed by the projection beam will be referred to as "downstream" or "upstream" or said first element. In this context, the expression "downstream" indicates that a displacement from the first element to the second element is a displacement along the direction of propagation of the projection beam; similarly, "upstream" indicates that a displacement from the first element to the second element is a displacement opposite to the direction or propagation of the projection beam. Further, the lithographic apparatus may be of a type having two or more substrate tables (and / or two or more mask tables). In such "multiple stage" devices, the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposures. Dual stage lithographic apparatus are described, for example, in United States Patent no. 5,969,441 and International Patent Application Publication No. WO 98/40791, both of which are incorporated by reference. (0005 | There is a desire to integrate an ever-increasing number of electronic components in an IC. In a lithographic apparatus, the size of features that can be imagined on the substrate may be limited by the wavelength of the projection radiation. To produce integrated circuits with a higher density of devices, and hence higher operating speeds, it is desirable to be able to image narrower features While most current lithographic projection apparatus employ ultraviolet light generated by mercury lamps or excimer lasers, it has been proposed to use shorter wavelength radiation in the range 5 to 20 nm, especially around 13 nm Such radiation is termed extreme ultraviolet (EUV) or soft x-ray and possible sources include, for instance, laser-produced plasma sources, discharge plasma sources, or synchrotron radiation from electron storage rings Apparatus using discharge plasma sources are described in: W. Partlo, 1. Fomenkov, R. Oliver, D. Birx, "Development of an EUV (13.5 nm) Light So urce Employing a Dense Plasma Focus in Lithium Vapor ", Proc. SPIE 3997, pp. 136-156 (2000); M.W. McGeoch, "Power Scaling of a Z-pinch Extreme Ultraviolet Source," Proc. SPIE 3997, pp. 861-866 (2000); W.T. Silfvast, M. Klosner, G. Shimkaveg, H. Bender, G. Kubiak, N. Fomaciari, "High-Power Plasma Discharge Source at 13.5 and 11.4 nm for EUV lithography", Proc. SPIE 3676, pp. 272-275 (1999); and K .. Bergmann et al., "Highly Repetitive, Extreme Ultraviolet Radiation Source Based on a Gas-Discharge Plasma", Applied Optics, Vol. 38, pp. 5413-5417 (1999).
    [00061 EUV radiation sources may use a relatively high partial pressure of a gas or vapor to emit EUV radiation, such as discharge plasma radiation sources referred to above. In a plasma source discharge, for instance, a discharge is created in between electrodes, and a resulting partially ionized plasma may be caused to collapse to yield a very hot plasma that emits radiation in the EUV range. The very hot plasma is often created in Xe, since a Xe plasma radiates in the Extreme UV (EUV) range around 13.5 nm. For an efficient EUV production, a typical pressure or 0.1 mbar is desired near the electrodes to the radiation source. A drawback or having such a relatively high Xe pressure is that Xe gas absorbs EUV radiation. For example, 0.1 mbar Xe transmits over 1 m only 0.3% EUV radiation having a wavelength or 13.5 nm. It is therefore desirable to confine the rather high pressure to a limited region around the source. To reach this, the source can be contained in its own vacuum chamber that is separated by a chamber wall from a subsequent vacuum chamber in which the collector mirror and illumination optics may be located.
    Another source for EUV radiation, known as a laser-produced plasma (LPP) source typically uses a CO2 laser. In current lithographic systems, radiation from the laser, having a wavelength or 10.6 pm may be able to reach the wafer with significant power. Part of this power is absorbed by the wafer, causing unwanted heating or the wafer.
    Thermal radiation emanating from, among others, the EUV source and a foil stage in a lithographic projection apparatus may result in heating of the objects on which it impinges. In a lithographic projection apparatus, these objects will generally be the optical components which make up the apparatus. An example of an optical component placed in the vicinity of the source, may be formed by a set of reflectors which function as a collector for light emanating from the source. Heating up the collector due to this thermal radiation may lead to expansion or parts in the collector, which may cause geometric aberrations or the collector and, ultimately, may lead to its destruction.
    SUMMARY
    [0009J It is an aspect of an embodiment of the invention to provide a dichroic mirror configured to remove the infrared radiation from the optical path towards the wafer. (0010) It is an aspect of an embodiment of the invention to provide a lithographic apparatus that includes such a dichroic mirror. (0011 (It is an aspect of an embodiment of the invention to provide a method of manufacturing such a dichroic mirror. ( 00121 It is an aspect of an embodiment of the invention to provide a semiconductor device. (0013] It is an aspect of an embodiment of the invention to provide a semiconductor device. [0014 (According to an aspect of an embodiment of the invention, there is provided a dichroic mirror configured to separate a radiation in a first wavelength range having an upper boundary λΐ from radiation in a second wavelength range having a lower boundary XI greater than λ 1. The mirror includes a substrate, and at least one stack having a reflective surface facing away from the substrate The stack includes alternating layers of first and second materials on the substrate The first and second materials are configured to provid e relative etch selectivity. A width of the stack increases stepwise in a direction towards the substrate. The reflective surface has steps with a width greater than λΐ and less than XI. In this way a surface is formed that is stepwise inclined with respect to the substrate. The one or more stacks may for example stepwise incline at both sides or their top. The inclination may be the same for both sides, so that the resulting shape or the one or more stacks is asymmetric. In an embodiment, the one or more stacks may incline at only one side of their top and have a surface at the other side that is substantially transverse to the surface of the substrate. (00151 In an embodiment, there is provided a dichroic mirror that is configured to separate a first type of radiation in a first wavelength range having an upper boundary from a second type of radiation in a second wavelength range having a lower boundary greater than the upper boundary of the first wavelength .The mirror includes a substrate, and at least one stack having a reflective surface facing away from the substrate and a width that increases stepwise in a direction towards the substrate.The stack is formed by alternating layers of first and second materials on the substrate The reflective surface has steps with a width greater than the upper boundary of the first wavelength and less than the lower boundary of the second wavelength 10016] The dichroic mirror may be a multiple of stacks. height and may be arranged at the substrate with a pitch A ratio between the pitch and the height may be in a range or between about 5 and about 25.
    The radiation in the first wavelength range has a wavelength that is narrower than the width of the steps. Determine the normal of the steps may determine the reflection direction of the EUV radiation. The wavelength of the radiation in the second wavelength range is larger than the size of the steps. See the surface of the mirror may appear to radiation in this wavelength range as a surface interpolated through the steps of the stacks that follows the global inclination. This surface has a surface normal that deviates from that of the individual steps. Beyond the radiation in the first and second wavelength ranges may be reflected in mutually different directions.
    [0018] This principle is particularly suited to separate the radiation in the infrared range, having a wavelength greater than λ2 or about 1 pm from the desired radiation in the extreme U V range having a wavelength or less than λΐ or about 100 nm.
    The dichroic mirror according to an embodiment of the present invention is formed by alternating layers of first and second materials on the substrate. The first and second materials are configured to provide relative etch selectivity. In the embodiment of the reflecting surface of the mirror is formed by a variety of stacks, a large reflecting surface may be obtained while the height of the stacks may be relatively modest.
    [0020] In an embodiment, there is provided a method of manufacturing a dichroic mirror configured to separate a first type of radiation in a first wavelength range having an upper boundary from a second type of radiation in a second wavelength range having a lower boundary greater than the upper boundary or the first wavelength range. The method includes forming an etch stack including alternating layers of first and second materials on a substrate surface, the first and second materials being configured to provide relative etch selectivity. The method includes creating a variety of staircase patterns in the etch stack, in which the staircase patterns have at least three levels and each level is formed by (i) forming a resist film on top of the stack, (ii) exposing respective patterned regions and developing to uncover regions of the stack, (iii) etching one or more layers of the stack at an uncovered region of resist, and repeating steps (i) through (iii), such that for a multiple of levels, a width of the uncovered region is decreased.
    The dichroic mirror according to an embodiment of the present invention may allow for an efficient way of manufacturing with a method of manufacturing according to an embodiment of the invention that includes forming an etch stack that includes alternating layers of first and second materials on a substrate surface. The first and second materials are configured to provide relative etch selectivity. The method includes creating a variety of staircase patterns in the etch stack. The staircase patterns have at least three levels each level is formed by: (i) forming a resist film on top of the stack; (ii) exposing respective patterned regions and developing to uncover regions of the stack; (iii) etching at least one layer of the stack where uncovered or resist; and (iv) repeating steps (i) through (iii). For a variety of levels, a width or one or more uncovered region is decreased. Depending on the shape of the stack (s) to be formed the width of the uncovered regions may be decreased in a different way. A symmetric shape can be obtained for example if the width of the uncovered regions is decreased by shrinking the uncovered regions at both sides with a width W. An asymmetric shape can be obtained for example if the uncovered regions are shrunk at one side with the width W The W has a value in the range λΐ <W <λ2 in comparison to the area for a respective preceding level.
    In an embodiment, each of the first and the second materials may have a specific etching agent and / or etching method for which the other material is insensitive. In this case the process of etching a layer of the first material stops when the surface or the layer of the second material is reached. Likewise the process of etching a layer of the second material stops when the surface of the layer of the first material is reached. Wait after each etching step a flat surface remains of the layer insensitive for that etching step.
    [0023] It may be sufficient if the first material is insensitive to an etching agent or method used for the other material. In an edition, the layers formed by the first material form an etch stop layer for the layers formed by the second material. The layers of the first material may have a thickness that is relatively small as compared to the layers of the second material. In that case, each etching cycle may include two steps. In the first step the uncovered portion of the hard mask formed by the layer of the first material may be removed by a first etching agent or method for that first material. The subsequent layer or the second material may also be partially etched. In the second step the uncovered portion or the subsequent layer of the second material is fully etched away by a second etching agent and / or method. Because the subsequent layer of the first material is insensitive to this agent and / or method this etching step ends at the surface of the subsequent layer, so that a flat surface is obtained.
    Examples of materials having a mutually different etch sensitivity are know as such. For example, the first material may be a silicon nitride or a silicon carbide, and the second material may be a phospho silicate glass. In an embodiment, the first material may serve as a hard mask. In an embodiment, a combination may be used or AI2O3 as the first material and SiOi as the second material. The first material may be etched by a CC14. The second material is etched by a combination of gases CF4 and CHF3. The first material is substantially insensitive for this combination.
    [0025] In an embodiment the stacks have a height H, and are arranged at the substrate with a pitch P, a ratio P / H between the pitch and the height being in a range of between about 5 and about 25. With a ratio substantially larger than 25, eg 50, the angle between the normal of the individual steps and the normal of the surface interpolated through the steps is relatively small, so that the two types of radiation may become difficult to separate in a small optical design.
    With a ratio substantially smaller than 5, e.g. 2, a relatively large height of the stacks is desired, which may result in relatively large manufacturing costs of the dichroic mirror.
    A high reflectivity of the dichroic mirror for both the first and the second type of radiation may be obtained in the first material and / or second material has a high reflectivity for these two types of radiation.
    In an embodiment of the dichroic mirror according to the invention, a surface of the stack facing away from the substrate is provided with a reflecting coating. The reflecting coating has an outer contour that substantially matches a relief profile formed by the stacks. This may make it possible to select the first and second materials from a larger group of materials. The reflecting coating may comprise a reflecting layer. In an embodiment of a dichroic mirror configured to separate infrared radiation from EUV radiation, a layer or, for example, Ru, Pd, or Rh may be used. These materials have a relatively good reflectivity for both types of radiation.
    In an embodiment, the reflecting coating may be formed by a Bragg reflector, for example a reflector stack comprising a 10 - 100 Mb / Si bi-layers. In practice a reflective coating that includes a single reflecting layer may be desirable for a grazing incidence application or the mirror, and reflective coating formed by a Bragg reflector may be desirable in a case of a normal incidence application.
    According to an aspect of the invention a lithographic apparatus is provided. The apparatus includes a radiation source configured to provide a beam of radiation; an illumination system configured to the beam of radiation condition; a support configured to support a patterning device, the patterning device configured to impart the beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; and a dichroic mirror in accordance with the invention described in the optic path between the radiation source and the substrate.
    In an embodiment, there is a device manufacturing method that includes providing a beam of radiation, and removing a undesired radiation or a beam with a dichroic mirror to form a filtered beam of radiation. The dichroic mirror includes a substrate, and at least one stack having a reflective surface facing away from the substrate and a width that increases stepwise in a direction towards the substrate. The stack is formed by alternating layers or first and second materials on the substrate. The reflective surface has steps with a width greater than an upper wavelength boundary of a desired radiation and less than a lower wavelength boundary of the undesired radiation. The method includes patterning the filtered beam or filtered radiation, and projecting a patterned beam or radiation onto a target portion of a substrate.
    A dichroic mirror according to an embodiment of the invention may be particularly suitable for application in a lithographic apparatus. As described above, the radiation source is designed to generate radiation or a short wavelength, such as radiation in the EUV range, in order to obtain patterns in the target substrate having small critical dimensions. However, EUV sources available in practice also generate radiate radiation in the infrared range. As the inventive dichroic mirror is arranged in the optic path between the radiation source and the patterning device in the lithographic apparatus according to the invention, infrared radiation may be substantially suppressed.
    LETTER DESCRIPTION OF THE DRAWINGS
    These and other aspects are described in more detail with reference to the drawings, in which: [0034] Figure 1A shows in cross-section of a dichroic mirror according to an embodiment of the invention; [0035 | Figure 1B shows a top view of the dichroic mirror according to B in Figure 1 A; [Figure 36 shows cross-section of a dichroic mirror according to an embodiment of the invention; Figure 2 shows schematically an enlarged portion of the dichroic mirror indicated by II in Figure 1A, and illustrates an aspect of the operation of the dichroic mirror; Figures 3A - 3D illustrates steps of a method of manufacturing a dichroic mirror according to an embodiment of the invention; Figures 4A and 4B illustrate an aspect of the operation of the mirror obtained with the method illustrated with reference to Figures 3A-3D; Figure 5 illustrates a lithographic apparatus according to an embodiment of the present invention; and [0041] Figure 5A illustrates a top view of a dichroic mirror as used in the lithographic device according to A in Figure 5.
    DETAILED DESCRIPTION (0042J Embodiments of the invention are described more fully hereinafter with reference to the accompanying drawings, in which are those of the invention are shown. Embodiments of the invention may, however, be embodied in many different forms and should not be constructed as limited Rather, these expired are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.
    In the following detailed description numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be understood by one skilled in the art that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures, and components have not been described in detail so as not to obscure aspects of the present invention.
    Figure 1A, IB show a dichroic mirror 1 configured to separate a first type of radiation in a first wavelength range having a upper boundary λΐ from a second type of radiation in a second wavelength range having a lower boundary X2 greater than λΐ. Therein Figure 1A shows a cross-section of the mirror 1 and Figure IB shows a top view according to arrow B in Figure 1 A. In the embodiment shown the first type of radiation is radiation in the extreme UV range having a wavelength or less than λΐ or about 100 nm and the second type of radiation is radiation in the infrared range, having a wavelength greater than 12 or about 1 pm.
    The mirror includes a substrate 10, at least one stack, here a variety of stacks 16 formed by alternating layers 12, 14 or first and second materials on the substrate 10. The first and second materials are configured to provide relative etch selectivity . A width of the stacks increases stepwise in a direction towards the substrate 10. The reflecting surface has steps 11 with a width W. The width W has a value in the range λΐ <W <XI. The steps have a length L in a direction transverse to the width W. Although only three stacks 16 are shown, in an embodiment, a larger variety of steps may be present. In the embodiment shown the width W of the steps is 5 pm. However, the width may have another value in the above-mentioned range, e.g. a width in the range or 0.1 to 8 pm.
    In the embodiment shown the stacks 16 have a height H, and are arranged at the substrate with a pitch P. The ratio P / H between the pitch and the height is desirably in a range or between about 5 and about 25. With a ratio substantially larger than 25, eg 50, the angle between the normal of the individual steps and the normal of the surface interpolated through the steps is relatively small, so that the two types of radiation may become difficult to separate in a small optical design. With a ratio substantially smaller than 5, e.g. 2, a relatively large height of the stacks is desired, which may result in relatively large manufacturing costs of the dichroic mirror. In the embodiment shown the stacks include twelve layers. These twelve layers include six layers 12 or a first material and six layers 14 or a second material that alternate with each other. In the embodiment shown the layers 12 include silicon nitride as the first material and have a thickness of about 50 nm. The layers 14 include phosphor silicate glass as the second material and have a thickness of about 500 nm.
    The height of the stacks formed is about 3.3 pm. In this embodiment, the pitch P or the stacks 16 is about 50 pm. Aw, the ratio P / H between the pitch and the height has a value of about 15 in this embodiment. 10048] In the embodiment shown the width of the stacks increases stepwise at each next layer 12 of the first material so that only the surface of this layer is visible seen from the top view. Alternatively the width may increase at each layer, both the layers 12 or the first material and the layers of the second material. In an embodiment the stack may maintain the same width over a larger number of layers, e.g. the width of the stack may increase at the second, the fourth and sixth layers, while the width may be substantially constant at the intermediate layer.
    A surface of the stacks 16 facing away from the substrate 10 may be provided with a reflecting coating 18, the reflecting coating 18 has an outer contour that substantially matches a relief profile formed by the stacks 16. In the embodiment shown the reflecting coating includes a reflecting layer, here a ruthenium layer having a thickness in the range of 5-20 nm for example. If the dichroic mirror is arranged near the radiation source, a substantially larger layer thickness e.g. in the order or several pm may be applied. IN an embodiment, a layer or palladium or ruthenium may serve as a reflective coating. These materials have a good reflectivity for radiation in the extreme UV range. In an embodiment, a reflective coating may be formed by a Bragg reflector, for example a reflector stack including 10-100 Mb / Si bi-layers or 4-8 nm thickness. A separate reflective coating may be omitted if the layers of the stacks 16 that are visible on the surface facing away from the substrate 10 already are sufficiently reflective for the two types of radiation that are separated to be.
    Figure 1C shows in cross-section a dichroic mirror according to an embodiment of the invention. Parts therein corresponding to those in Figure 1A and 1B have the same reference number. In this edition the dichroic mirror includes a single asymmetric stack, that stepwise inclines at a first side 1A or its top 1C, and that has a surface substantially transverse to the surface of the substrate on the opposite side IB. In this embodiment the stack includes 12 bilayers each including a first layer or a first material and a second layer or a second material. The materials are configured to have mutually different etch sensitivities. 10051] Figure 2 illustrates how the mirror separates the first type of radiation EUV from the second type of radiation IR. Figure 2 shows schematically an enlarged portion of the dichroic mirror indicated by II in Figure 1A. Parts therein corresponding to those in Figures IA, IB have the same reference numeral. An incident beam Rin of radiation, includes radiation or a first type of EUV, in particular having a wavelength or 13.4 nm and radiation or a second type of IR, here having a wavelength or 10.6 pm. As the wavelength 13.4 nm of the EUV radiation is substantially narrower than the width W of the steps, here 5 pm, the details of the mirror formed by the steps are visible, so that the direction of reflection of the EUV radiation is determined by the normal 18a of the steps. In this case where the incident beam or radiation has an angle substantially parallel with the normal 18a, the EUV part of the incident beam is reflected substantially in the direction of the normal. As the wavelength 10.6 pm of the infrared radiation is larger than the details with width W or 5 pm formed by the steps, only the global inclination is visible in this wavelength range. Hence, for this wavelength range the reflecting surface appears as a plane 20 through the steps. This reflecting surface 20 has a surface normal 20a that is rotated with respect to the surface normal 18a or the individual steps. Irrespective of the infrared radiation IR is radiated at an angle from the extreme ultraviolet radiation EUV. Figures 3 A to 3D illustrate an embodiment of a method of manufacturing a dichroic mirror as described with reference to Figures 1 A, IB and 2. The method includes: forming an etch stack including alternating layers 12, 14 or first and second materials on a substrate surface 10 where the two materials can provide relative etch selectivity; the alternating layers 12, 14 may be deposited in a way known as such, eg by chemical vapor deposition, but also by example spray-coating, slit-coating, slot-die coating, extrusion coating, printing like ink-jet printing, flexo printing, offset printing, or spin coating. After this step the layered structure shown in Figure 3A is obtained. If the layers are applied are not considered sufficient flat, an intermediate planarization step may be applied, for example by chemical mechanical polishing (CMP).
    [0053 | Sub much a variety or stair case patterns is created in the etch stack. By repeating the following steps (i) to (iii): 100541 (i) forming a resist film on top of the stack; (Ii) exposing respective patterned regions and developing to uncover regions of the stack; and [0056 | (iii) etching one or more layers of the stack where uncovered or resist; After applying this sequence of steps (i) to (iii) for the first time, the portion of the layer 12 most remote from the substrate 10 not covered by resist layer has been removed. Then with another etching agent for which the layers of the first material are not sensitive, an uncovered portion of the layer 14 or the second material most remote from the substrate 10 has been removed, so that the structure shown in Figure 3B is obtained. 10058] The sequence of steps (i) to (iii) is then repeated for a second time. Therein the width of the uncovered region is decreased by covering an additional surface with resist 15. In this case each strip or resist 15 is widened on both sides with a width W. After repeating steps (i) to (iii) for the second time if first a layer 12 or the first material and then a layer 14 or the second material is etched by a respective method or agent, the structure shown in Figure 3C is obtained. After repeating steps (i) to (iii) for another five times and subsequently removing the remaining resist, the structure shown in Figure 3D is obtained. A surface (top-surface) or this structure facing away from the substrate 10 may be provided with a reflecting layer, if this top-surface is not itself reflecting for both types of radiation.
    Figures 4A and 4B schematically show a part of the structure obtained according to the method according to the present invention. Therein Figure 4A shows the part in cross-section, and Figure 4B shows the part according to a side view as indicated by arrow B in Figure 4A.
    Parts therein corresponding to the previous Figures have a corresponding reference numeral. As shown therein due to the step of etching the layers 12, 14, the layers 14 may show an undercut 14a. A portion of the radiation may be lost when it reflects against the undercut region of the layers 14. In practice this loss of radiation is negligible if a plane through the normal 18a of the reflective surface and optical path of the incident radiation Rin is oriented along the length direction of the steps, ie transverse to the direction in which the stacks widen stepwise.
    Figure 5 schematically shows a lithographic apparatus 100 according to an embodiment of the invention. The lithographic apparatus includes a radiation source RS for providing a beam of radiation. The lithographic apparatus 100 includes an illumination system with mirrors M1-M4 configured to condition the beam of radiation. The lithographic apparatus 100 is provided with a support (not shown) configured to support a patterning device MK. The patterning device MK is configured to provide the beam with a pattern in its cross-section. The patterned beam is projected by a projection system, including mirrors M5-M10 onto a target portion or a substrate ST. The substrate ST arranged at a substrate table (not shown) configured to hold the substrate ST.
    A dichroic mirror 1 as described with reference to Figures 1A to 4B is arranged between the radiation source RS and the substrate ST. In the embodiment shown the dichroic mirror 1 is arranged in the optical path between the illumination system Μ1-M4 and the patterning device MK. The dichroic mirror 1 is arranged as a grazing incidence mirror, in particular the angle between the incident beam Rin, provided by the illumination system M1-M4 and the normal or 18a of the surface is in a range between 75 and 89 degrees. However, because a plane through the normal 18a of the reflective surface, which is the normal with respective to the surface of the individual steps 11 and optical path of the incident radiation Rin is oriented along the length direction of the steps 11, the loss of EUV radiation is negligible. This is further clarified in Figure 5A, which shows a top view of the mirror according to arrow A in Figure 5, ie a view in a direction perpendicular to the surface of the steps 11 of the mirror 1. The incoming beam of radiation Rin is incident in a plane transverse to the surface of the steps and arranged along the length direction of the steps. The EUV component of the incoming beam or radiation is also reflected in this plane. The 1R component is reflected in the plane through the incoming beam Rin and the normal 20a or the plane 20 interpolated through the steps 11. Reference is also made to Figure 2 which is also made to a side view of the mirror 1 or Figure 5A according to to arrow II in Figure 5A and arrow II in Figure 5.
    A grazing incidence mirror may be flat or curved in a single direction, which is advantageous. All other mirrors are double curved. A grazing mirror may be provided with a reflective surface formed by a single layer of a material reflective for the desired type of radiation, e.g. a layer of Ru, Pt or Rh in case of EUV radiation. It is sufficient if the layer is flat contrary to the case with a reflective surface formed by a multi-layer which has extreme severe requirement for the layer uniformity and absolute thickness. This is relatively costly to manufacture in a case or a stepped surface.
    In an embodiment, the dichroic mirror may not be arranged between the illumination system and the patterning device. The dichroic mirror according to an embodiment of the present invention may be arranged at another position in the optical path. The dichroic mirror may be arranged in the optical path between two mirrors of the illumination system, or between the radiation source and the illumination system.
    [0065 | In the clausess the word "including" does not exclude other elements or steps, and the indefinite article "a" or "an" does not exclude a plurality. A single component or other unit may fulfill the functions or several items recited in the clausess. The more fact that certain measures are recited in mutually different clauses does not indicate that a combination of these measures cannot be used to advantage. Any reference signs in the clausess should not be constructed as limiting the scope. Other aspecs of the invention are set out as in the following numbered clauses: 1. A dichroic mirror configured to separate a first type of radiation in a first wavelength range having an upper boundary from a second type of radiation in a second wavelength range having a lower boundary greater than the upper boundary of the first wavelength, the mirror including: a substrate; and at least one stack having a reflective surface facing away from the substrate and a width that increases stepwise in a direction towards the substrate, the stack being formed by alternating layers of first and second materials on the substrate, the reflective surface having steps with a width greater than the upper boundary of the first wavelength and less than the lower boundary of the second wavelength. 2. The dichroic mirror according to clauses 1, having a surface of the least one stack, facing away from the substrate is provided with a reflecting coating, having the reflecting coating has an outer contour that substantially matches a relief profile formed by the at least one stack. 3. The dichroic mirror according to clauses 2, the reflecting coating comprises a reflecting layer. 4. The dichroic mirror according to clauses 2, the reflecting coating comprising a Bragg reflector. 5. The dichroic mirror according to clauses 1, the first type of radiation is extreme ultraviolet radiation, and the second type of radiation is infrared radiation. 6. A lithographic apparatus, including: a radiation source for providing a beam of radiation; an illumination system configured to the beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; and a dichroic mirror according to any of the preceding clauses arranged between the radiation source and the substrate. 7. The lithographic apparatus according to clauses 6, involving a plane through the normal of the reflective surface of the dichroic mirror and the optical path of incident radiation on the reflective surface is oriented along a length direction of the steps. 8. A method of manufacturing a dichroic mirror configured to separate a first type of radiation in a first wavelength range having an upper boundary from a second type of radiation in a second wavelength range having a lower boundary greater than the upper boundary of the first wavelength range, the method including: (a) forming an etch stack comprising alternating layers of first and second materials on a substrate surface, the first and second materials being configured to provide relative etch selectivity; (b) creating a variety of staircase patterns in the etch stack, having the staircase patterns at least three levels and each level is formed by (i) forming a resist film on top of the stack; (ii) exposing respective patterned regions and developing to uncover regions of the stack; (iii) etching one or more layers of the stack at an uncovered region of resist; and (iv) repeating steps (i) through (iii), such that for a variety of levels, a width of the uncovered region is decreased. 9. The method according to clauses 8, further comprising coating a surface facing away from the substrate with a layer that substantially matches the staircase patterns and that is reflective for both the first type of radiation and for the second type of radiation. 10. The method according to clauses 8, the layers of the first material have a thickness that is substantially less than the layers of the second material and the layers of the first material function as a hard mask for the layers of the second material . 11. The method according to clauses 9, where the first material is a silicon nitride or a silicon carbide, and the second material is a phospho silicate glass. 12. The method according to any one of clauses 8-11, further including applying a reflecting coating on a surface of the stack facing away from the substrate, the reflecting coating has an outer contour that substantially matches that of the relief profile. 13. A device manufacturing method, including: providing a beam of radiation; removing a undesired radiation from the beam with a dichroic mirror according to clauses 1 to form a filtered beam from radiation; patterning the filtered beam or filtered radiation; and projecting a patterned beam or radiation onto a target portion of a substrate. 14. A device manufacturing method, including: providing a beam of radiation; and removing a undesired radiation of the beam with a dichroic mirror to form a filtered beam of radiation, the dichroic mirror including a substrate, and at least one stack having a reflective surface facing away from the substrate and a width that increases stepwise in a direction towards the substrate, the stack being formed by alternating layers of first and second materials on the substrate, the reflective surface having steps with a width greater than an upper wavelength boundary of a desired radiation and less than a lower wavelength boundary of the undesired radiation; patterning the filtered beam or filtered radiation; and projecting a patterned beam of radiation onto a target portion of a substrate.
    权利要求:
    Claims (1)
    [1]
    A lithography device comprising: an illumination device adapted to provide a radiation beam; a carrier constructed to support a patterning device, the patterning device being capable of applying a pattern in a section of the radiation beam to form a patterned radiation beam; a substrate table constructed to support a substrate; and a projection device adapted to project the patterned radiation beam onto a target area of the substrate, characterized in that the substrate table is adapted to position the target area of the substrate in a focal plane of the projection device.
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    法律状态:
    2010-01-04| AD1A| A request for search or an international type search has been filed|
    2010-03-31| WDAP| Patent application withdrawn|Effective date: 20100301 |
    优先权:
    申请号 | 申请日 | 专利标题
    US7151808P| true| 2008-05-02|2008-05-02|
    US7151808|2008-05-02|
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